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| process CPZ39R transient voltage suppressor 5 volt quad tvs chip geometry principal device type cmntvs5v0 gross die per 5 inch wafer 140,490 process details die size 11 x 11 mils die thickness 3.94 mils cathode bonding pad areas (4) 3.54 mils diameter each top side metalization al - 30,000? back side metalization au - 9,000? www.centralsemi.com r0 (22-january 2013)
process CPZ39R typical electrical characteristics www.centralsemi.com r0 (22-january 2013) |
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